- Fabricant:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 2,639
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
5,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER QUAD 40MHZ HS 16-QFN
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Renesas Electronics America Inc. |
4,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER QUAD HS NON-INV 16SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Texas Instruments |
20,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Texas Instruments |
7,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Renesas Electronics America Inc. |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
Texas Instruments |
44,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR HALF BRDG 5A 12SMD
|
- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA,DSBGA | 12-DSBGA | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 107V | 7ns,1.5ns | 1.76V,1.89V | 1.2A,5A | ||||
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
- | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295",7.50mm Width) | 24-SOIC | Surface Mount | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Renesas Electronics America Inc. |
27,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 40MHZ 3ST 8-SOIC
|
- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Diodes Incorporated |
12,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns,240ns | - | 2A,2A | ||||
Diodes Incorporated |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns,240ns | - | 2A,2A | ||||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns,11ns | 0.7V,3.4V | - | ||||
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.3ns,10.8ns | - | 9A,9A | ||||
ON Semiconductor |
75,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 0.8V,2V | 3A,3A | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 100V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
μHVIC | 10 V ~ 18 V | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 600V | 85ns,40ns | - | 160mA,240mA | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,30ns | 0.8V,2.5V | 290mA,600mA |