- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 116
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
5,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 200V | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
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Renesas Electronics America Inc. |
3,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
- | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Inverting，Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA | ||
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Infineon Technologies |
2,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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ON Semiconductor |
24,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
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|
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Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 48-MLPQ
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 48-VFQFN Exposed Pad，34 Leads | 48-MLPQ，34 Leads (7x7) | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
1,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28 | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
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Infineon Technologies |
1,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
- | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Texas Instruments |
250
|
3 jours |
-
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MOQ: 250 MPQ: 1
|
38V THREE-PHASE SMART GATE DRIVE
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- | 6 V ~ 38 V | -40°C ~ 125°C | 40-VFQFN Exposed Pad | 40-VQFN (6x6) | Non-Inverting | High-Side or Low-Side | 3 | N-Channel MOSFET | - | 300ns，150ns | 0.8V，1.5V | 150mA，300mA | ||
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STMicroelectronics |
1,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Automotive，AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | Half-Bridge | 6 | N-Channel MOSFET | - | 35ns，35ns | 0.8V，2V | - | ||
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Richtek USA Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC FET DVR 3CH SYNC BUCK 24WQFN
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- | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 24-WQFN Exposed Pad | 24-WQFN (5x5) | Inverting，Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | 15V | 25ns，12ns | 0.7V，3.2V | - | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
38V 3-PHASE SMART GATE DRIVER
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- | 6 V ~ 38 V | -40°C ~ 125°C | 40-VFQFN Exposed Pad | 40-VQFN (6x6) | Non-Inverting | High-Side or Low-Side | 3 | N-Channel MOSFET | - | 300ns，150ns | 0.8V，1.5V | 150mA，300mA | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 1500 MPQ: 1
|
HV GATE DRIVER SO-28
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SO | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，35ns | 0.8V，2.4V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | Inverting | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | 1.1V，1.7V | - | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
EiceDriver | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-TSSOP-28 | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | 1.1V，1.7V | - | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28-17 | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28 | Inverting | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | 1.1V，1.7V | - | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA |
