- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 102
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
4,000
|
3 jours |
-
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MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
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Infineon Technologies |
12,500
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3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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Infineon Technologies |
5,000
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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Infineon Technologies |
12,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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Infineon Technologies |
22,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
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12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
5,000
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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Infineon Technologies |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
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9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
6,000
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3 jours |
-
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MOQ: 2000 MPQ: 1
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IC GATE DVR 9A NON-INV 8SOIC
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
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Infineon Technologies |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 28-SOIC
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12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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2A MOSFET 8 DFN DUAL INV/NON-INV
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
2A 8 SOIC DUAL INV/NON-INVERTING
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
2A 8 DFN DUAL INVERTING
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
2A 8 SOIC DUAL INVERTING
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
2A 8 LEAD SOIC DUAL NON INVERTIN
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC GATE DVR 2A DUAL HS 8DFN
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
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4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 3A，3A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
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4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 3A，3A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
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4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 3A，3A |
