- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 167
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | ||
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|
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Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | ||
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|
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Texas Instruments |
22,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOIC
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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|
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOIC
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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|
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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|
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Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | ||
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ON Semiconductor |
75,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | ||
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ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | ||
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|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | ||
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|
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Automotive，AEC-Q100 | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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|
|
Texas Instruments |
7,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8VSON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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Texas Instruments |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 9SON
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VFDFN Exposed Pad，9 Leads | 9-VSON (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR FET P-P 8-UMAX
|
- | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | ||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR MONO HI/LO 16SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HI/LO SIDE 8WSON
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- | ||
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|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HI/LO SIDE 3A 8SOPWR
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- |
