- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Conditions sélectionnées:
Découvrez les produits 14
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting,Non-Inverting | Independent | 2 | IGBT,SiC MOSFET | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Inverting | Independent | 2 | N-Channel MOSFET | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Non-Inverting | Independent | 2 | N-Channel MOSFET | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Inverting,Non-Inverting | Independent | 2 | IGBT,SiC MOSFET | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | 2 | N-Channel MOSFET | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | N-Channel MOSFET | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | 2 | IGBT,SiC MOSFET | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
Automotive,AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting,Non-Inverting | Single | 1 | N-Channel MOSFET | 24ns,16ns | 4A,8A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Automotive,AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting,Non-Inverting | Independent | 2 | N-Channel MOSFET | 48ns,32ns | 2A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Automotive,AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting,Non-Inverting | Independent | 2 | N-Channel MOSFET | 48ns,32ns | 2A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRIVER HNM LL SOT23-6
|
- | 6 V ~ 14 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting,Non-Inverting | Single | 1 | N-Channel MOSFET | 36ns,17ns | 3A,7A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER HNM LL SOT23-6
|
- | 6 V ~ 14 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting,Non-Inverting | Single | 1 | N-Channel MOSFET | 36ns,17ns | 3A,7A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Automotive,AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 125°C | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting,Non-Inverting | Independent | 2 | N-Channel MOSFET | 48ns,32ns | 2A,4A |