Découvrez les produits 14
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Number of Drivers Gate Type Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
MAX17603ATA+T
Maxim Integrated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
- 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting Independent 2 N-Channel MOSFET 40ns,25ns 4A,4A
MAX17605ATA+T
Maxim Integrated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
- 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting,Non-Inverting Independent 2 IGBT,SiC MOSFET 40ns,25ns 4A,4A
MAX17603AUA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
- 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Inverting Independent 2 N-Channel MOSFET 40ns,25ns 4A,4A
MAX17604AUA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
- 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Non-Inverting Independent 2 N-Channel MOSFET 40ns,25ns 4A,4A
MAX17605AUA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
- 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Inverting,Non-Inverting Independent 2 IGBT,SiC MOSFET 40ns,25ns 4A,4A
MAX17603ASA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8SOIC
- 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent 2 N-Channel MOSFET 40ns,25ns 4A,4A
MAX17604ASA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8SOIC
- 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 2 N-Channel MOSFET 40ns,25ns 4A,4A
MAX17605ASA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8SOIC
- 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent 2 IGBT,SiC MOSFET 40ns,25ns 4A,4A
MAX15024BATB+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Automotive,AEC-Q100 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Single 1 N-Channel MOSFET 24ns,16ns 4A,8A
MAX15025BATB+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Automotive,AEC-Q100 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent 2 N-Channel MOSFET 48ns,32ns 2A,4A
MAX15025DATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Automotive,AEC-Q100 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent 2 N-Channel MOSFET 48ns,32ns 2A,4A
MAX15070BAUT+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRIVER HNM LL SOT23-6
- 6 V ~ 14 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single 1 N-Channel MOSFET 36ns,17ns 3A,7A
MAX15070BEUT+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER HNM LL SOT23-6
- 6 V ~ 14 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single 1 N-Channel MOSFET 36ns,17ns 3A,7A
MAX15025BATB+
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Automotive,AEC-Q100 4.5 V ~ 28 V -40°C ~ 125°C 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent 2 N-Channel MOSFET 48ns,32ns 2A,4A