- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 152
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
4,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Non-Inverting | Single | Low-Side | 1 | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 48ns,24ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC IGBT DVR 1200V DSO14
|
Automotive,AEC-Q100,EiceDriver | 13 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | - | Single | High-Side or Low-Side | 1 | 1200V | 50ns,90ns | 1.5V,3.5V | - | ||||
Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28 | Non-Inverting | 3-Phase | Half-Bridge | 6 | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
IXYS Integrated Circuits Division |
6,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
700V GATE DRIVER
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Synchronous | High-Side or Low-Side | 2 | 700V | 16ns,10ns | 0.8V,2.4V | 1.8A,2.8A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
UCC27712QDRQ1
|
Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Synchronous | High-Side or Low-Side | 2 | 700V | 16ns,10ns | 0.8V,2.4V | 1.8A,2.8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-DSO | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 48ns,24ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | PG-TSSOP-28 | Inverting | 3-Phase | Half-Bridge | 6 | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
EiceDriver | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-TSSOP-28 | Non-Inverting | 3-Phase | Half-Bridge | 6 | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28-17 | Non-Inverting | 3-Phase | Half-Bridge | 6 | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28 | Inverting | 3-Phase | Half-Bridge | 6 | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER IGBT DSO36
|
EiceDriver | 13 V ~ 20 V | -40°C ~ 150°C (TJ) | 36-BSSOP (0.295",7.50mm Width),32 Leads | PG-DSO-36-58 | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | 1200V | 30ns,50ns | 1.5V,3.5V | 2.4A,2.4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER MOSFET 3A 8MSOP
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Inverting,Non-Inverting | Single | Low-Side | 1 | - | 14ns,12ns | 0.8V,2.3V | 3A,7A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A 8MSOP
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Inverting,Non-Inverting | Single | Low-Side | 1 | - | 14ns,12ns | 0.8V,2.3V | 3A,7A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | - | Independent | Half-Bridge | 2 | 1200V | 25ns,15ns | 6V,9.5V | 2A,3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 200V 3PHASE 28TSSOP
|
EiceDriver | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | PG-TSSOP-28 | Non-Inverting | 3-Phase | Half-Bridge | 6 | 200V | 60ns,26ns | 1.1V,1.7V | - | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HV HI/LOW SIDE 8SOIC
|
- | 17V (Max) | -45°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | - | Inverting | Independent | Half-Bridge | 2 | 600V | 70ns,40ns | 1.1V,1.8V | 400mA,650mA | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A MOSFET 8 DFN DUAL INV/NON-INV
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Inverting,Non-Inverting | Independent | Low-Side | 2 | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8 SOIC DUAL INV/NON-INVERTING
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A |