- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 35
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns,11ns | 0.7V,3.4V | - | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 21ns,18ns | 0.8V,1V | 3A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Automotive,AEC-Q100 | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 30ns,8ns | 0.6V,2.65V | - | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Automotive,AEC-Q100 | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 30ns,8ns | 0.6V,2.65V | - | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET DUAL SYNC 8WSON
|
- | 4.3 V ~ 6.8 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 17ns,12ns | - | 3A,3.2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 8-MLPD
|
- | 6.5 V ~ 7.5 V | 0°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 5ns,5ns | - | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET GATE DRIVER SON-8
|
- | 6.5 V ~ 7.5 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SON | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 5ns,5ns | - | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 10ns,8ns | 0.8V,1V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 10ns,8ns | 0.8V,1V | 2A,2A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 QFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns,11ns | 0.7V,3.4V | - | ||||
ON Semiconductor |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER QFN
|
- | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 36-TFQFN Exposed Pad | 36-QFN (6x4) | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - | ||||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns,11ns | 0.7V,3.4V | - | ||||
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns,11ns | 0.7V,3.4V | - | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8SOIC
|
- | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 20ns,11ns | 0.8V,2V | - | ||||
ON Semiconductor |
27,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-SOIC
|
- | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns,11ns | 0.8V,2V | - | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns,11ns | 0.7V,3.4V | - | ||||
ON Semiconductor |
18,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
- | 4.6 V ~ 13.2 V | -20°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting,Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 20ns,11ns | 0.8V,2V | - | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
- | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns,11ns | 0.7V,3.4V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns,11ns | 0.7V,3.4V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
- | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting,Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 20ns,11ns | 0.8V,2V | - |