Découvrez les produits 71
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS44273LTRPBF
Infineon Technologies
15,000
3 jours
-
MOQ: 3000  MPQ: 1
IC DRIVER LOW SIDE 1.5A SOT23-5
μHVIC 10.2 V ~ 20 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 0.8V,2.5V 1.5A,1.5A
IRS4427STRPBF
Infineon Technologies
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR LOW SIDE DUAL 8SOIC
- 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side 2 IGBT,N-Channel MOSFET - 0.8V,2.5V 2.3A,3.3A
IRS4426STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR LOW SIDE DUAL 8-SOIC
- 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent Low-Side 2 IGBT,N-Channel MOSFET - 0.8V,2.5V 2.3A,3.3A
IRS4428STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR LOW SIDE DUAL 8-SOIC
- 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel MOSFET - 0.8V,2.5V 2.3A,3.3A
IRS44262STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR LOW SIDE DUAL 8-SOIC
- 11.2 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent Low-Side 2 IGBT,N-Channel MOSFET - 0.8V,2.5V 2.3A,3.3A
MAX4420CSA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SGL 6A HS 8-SOIC
- 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 0.8V,2.4V 6A,6A
MAX4420ESA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SGL 6A HS 8-SOIC
- 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 0.8V,2.4V 6A,6A
UC3708DWTR
Texas Instruments
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DUAL NON-INV PWR DRVR 16-SOIC
- 5 V ~ 35 V 0°C ~ 70°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOIC Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 0.8V,2V 3A,3A
UC3708DWTRG4
Texas Instruments
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DUAL NON-INV PWR DRVR 16-SOIC
- 5 V ~ 35 V 0°C ~ 70°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOIC Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 0.8V,2V 3A,3A
UC2708DWTRG4
Texas Instruments
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DUAL NON-INV PWR DRVR 16SOIC
- 5 V ~ 35 V -25°C ~ 85°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOIC Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 0.8V,2V 3A,3A
UC2708DWTR
Texas Instruments
Enquête
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MOQ: 2000  MPQ: 1
IC DUAL NON-INV PWR DRVR 16SOIC
- 5 V ~ 35 V -25°C ~ 85°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOIC Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 0.8V,2V 3A,3A
TSC428CBA+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRVR MOSFET DUAL 8-SOIC
- 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.5A,1.5A
MAX4429ESA+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
- 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 0.8V,2.4V 6A,6A
MAX4429CSA+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
- 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 0.8V,2.4V 6A,6A
IRS21952STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 0.6V,3.5V 500mA,500mA
IRS21962STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HI SIDE DUAL 600V 16SOIC
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 0.6V,3.5V 500mA,500mA
MAX4420ESA-T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-SOIC
- 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 0.8V,2.4V 6A,6A
MAX4429ESA-T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
- 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 0.8V,2.4V 6A,6A
TC4427ACOA713
Microchip Technology
3,300
3 jours
-
MOQ: 3300  MPQ: 1
IC MOSFET DVR 1.5A DUAL HS 8SOIC
- 4.5 V ~ 18 V 0°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.5A,1.5A