- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 98
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 2500 MPQ: 1
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MOSFET DRIVER 2CH 3.3V 6A 8SOIC
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4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
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4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
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4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | ||
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|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 24V 6A 8SOIC
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5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 33ns，33ns (Max) | 0.8V，2.5V | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-SOIC
|
4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-SOIC
|
4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | ||
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|
IXYS |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRVR HALF BRIDGE 4A 16-SOIC
|
10 V ~ 35 V | -40°C ~ 125°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.6V | ||
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|
IXYS |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRVR HALF BRIDGE 4A 18-SOIC
|
10 V ~ 35 V | -40°C ~ 125°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.6V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-SOIC
|
4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-SOIC
|
4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 6A 8SOIC
|
7.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 2.4V，9.6V |
