- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Channel Type：
-
- Driven Configuration：
-
- High Side Voltage - Max (Bootstrap)：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 27
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 200V | 50ns，30ns | 350mA，650mA | ||
|
|
|
Renesas Electronics America Inc. |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 500mA，500mA | ||
|
|
|
ON Semiconductor |
24,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 350mA，650mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
8 V ~ 14 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
8 V ~ 14 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，13ns | 1.5A，2.5A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC FET DRIVER H-BRIDGE 1A 16SOIC
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1A，1A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC DRIVER FET H-BRDG 80V 16-SOIC
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1.4A，1.3A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER FET H-BRDG 80V 16SOIC
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SO | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1.4A，1.3A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HISIDE N-CH 3PH 16SOIC
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Inverting | 3-Phase | High-Side | 3 | N-Channel MOSFET | 95V | 35ns，30ns | - | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FET DRVR 60V/2.5A HF 20-SOIC
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Inverting，Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR MOSFET N-CH 3PHASE 24SOIC
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 500mA，500mA | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER H-BRIDGE 16-SOIC
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1.4A，1.3A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FULL BRIDGE FET 20SOIC
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FULL BRIDGE FET 20SOIC
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HISIDE N-CH 3PH 16SOIC
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Inverting | 3-Phase | High-Side | 3 | N-Channel MOSFET | 95V | 35ns，30ns | - | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET N-CH 3PH 24SOIC
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 500mA，500mA | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 14A 8-SOIC
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 14A，14A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 14A 8-SOIC
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 14A，14A |
