- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 9
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DVR HALF BRIDGE IC 24SSOP
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11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Non-Inverting | Independent | IGBT | 1200V | 24ns，7ns | 0.8V，2V | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 16SOIC
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12 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | - | Independent | IGBT，N-Channel，P-Channel MOSFET | 1200V | 25ns，15ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DVR HALF BRIDGE 600V 24-SSOP
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11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Non-Inverting | Independent | IGBT | 600V | 24ns，7ns | 0.8V，2V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DVR HALF BRIDGE 600V 24-SSOP
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11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Non-Inverting | Independent | IGBT | 600V | 24ns，7ns | 0.8V，2V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC DVR HALF BRIDGE IC 24SSOP
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11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Non-Inverting | Independent | IGBT | 1200V | 24ns，7ns | 0.8V，2V | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 100V 8-SOIC
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9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | N-Channel MOSFET | 118V | 330ns，200ns | 0.8V，2.2V | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 100V CMOS 8SOIC
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9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 10ns，6ns | 3V，8V | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 100V TTL 8-SOIC
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9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 10ns，6ns | 0.8V，2.2V | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 100V 8-SOIC
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9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | N-Channel MOSFET | 118V | 330ns，200ns | 0.8V，2.2V |
