- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 12
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
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IC MOSFET DRVR 100V 1.25A 9-DFN
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9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 1.4V，2.2V | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC MOSFET DRVR 100V 1.25A 9-DFN
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9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 3.7V，7.4V | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
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9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 3.7V，7.4V | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRVR H-BRDG 100V 1.25A 8SOIC
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9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 1.4V，2.2V | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRVR H-BRDG 100V 1.25A 8SOIC
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9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 3.7V，7.4V | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
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9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 1.4V，2.2V | 1.25A，1.25A | ||
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Linear Technology/Analog Devices |
17,500
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3 jours |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR N-CH DUAL 8-SOIC
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4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 1.7V，2.2V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR N-CH DUAL 8-SOIC
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4.5 V ~ 13.2 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 1.7V，2.2V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR N-CH DUAL 8-SOIC
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4.5 V ~ 13.2 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 1.7V，2.2V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR P-CH SINGLE 8-MSOP
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4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Inverting，Non-Inverting | Single | High-Side | 1 | P-Channel MOSFET | - | 1.7V，2.2V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR N-CH SINGLE 8-MSOP
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4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Inverting，Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 1.7V，2.2V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR N-CH DUAL 8-SOIC
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4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 1.7V，2.2V | 1.5A，1.5A |
