- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 21
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
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4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Low-Side | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 250 MPQ: 1
|
IC DRVR HALF BRIDGE 60V 8-DFN
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4.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Half-Bridge | 60V | 8ns，2ns | 1.63V，2.06V | 1A，1A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
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4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Low-Side | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRIDGE 60V 8-DFN
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4.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Half-Bridge | 60V | 8ns，2ns | 1.63V，2.06V | 1A，1A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
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4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Low-Side | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
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4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Low-Side | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Inverting | Low-Side | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Inverting | Low-Side | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Low-Side | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Low-Side | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 6A 8TDFN
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7.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | Non-Inverting | Low-Side | - | 20ns，20ns | 2.4V，9.6V | 6A，6A | ||
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|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 6A 8TDFN
|
7.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad | Inverting | Low-Side | - | 20ns，20ns | 2.4V，9.6V | 6A，6A | ||
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|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Low-Side | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Inverting | Low-Side | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Low-Side | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Low-Side | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Inverting | Low-Side | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Low-Side | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Low-Side | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 8TDFN
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | Inverting | Low-Side | - | 20ns，20ns | 1.22V，2.08V | 6A，6A |
