Fabricant:
Supplier Device Package:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 4
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Package / Case Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
TDA21106
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER DUAL HS MOSFET 8DSO
CoreControl 10.8 V ~ 13.2 V 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Synchronous Half-Bridge 2 N-Channel MOSFET 45V 20ns,15ns - 4A,4A
PX3516ADDGR4XTMA1
Infineon Technologies
Enquête
-
-
MOQ: 4000  MPQ: 1
IC BUCK SYNC DRIVER DL TDSON10-2
- 4.5 V ~ 6 V 10-VFDFN Exposed Pad TDSON-10-2 Synchronous Half-Bridge 2 N-Channel MOSFET 30V 10ns,10ns 1.3V,1.9V 2A,2A
BD6562FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET 2CH 16SSOP
- 10 V ~ 25 V 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6563FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET 3CH 16SSOP
- 10 V ~ 25 V 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Independent Low-Side 3 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA