- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 14
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 10TDFN
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8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Non-Inverting | Independent | 114V | 9ns，7.5ns | 3A，4A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC MOSFET DRVR 100V 1.25A 9-DFN
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9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | 100V | 16ns，16ns | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 100V | 16ns，16ns | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 100V | 16ns，16ns | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDGE HI FREQ 8SOIC
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9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 114V | 10ns，10ns | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC DVR HALF-BRDG HF 100V 2A 9DFN
|
9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | 114V | 10ns，10ns | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 114V | 9ns，7.5ns | 3A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 12-DFN
|
8 V ~ 14 V | -40°C ~ 125°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Non-Inverting | Independent | 114V | 9ns，7.5ns | 3A，4A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8DFN
|
8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Non-Inverting | Independent | 114V | 9ns，7.5ns | 3A，4A | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Inverting | Synchronous | 114V | 10ns，10ns | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Inverting | Synchronous | 114V | 10ns，10ns | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Inverting | Independent | 114V | 10ns，10ns | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Inverting | Independent | 114V | 10ns，10ns | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Inverting | Independent | 114V | 10ns，10ns | 2A，2A |
