- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 38
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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ON Semiconductor |
27,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | ||
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ON Semiconductor |
3,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HI/LOW SIDE 8SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
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ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | ||
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Infineon Technologies |
2,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
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- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 1.2V，2.2V | ||
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
- | 9 V ~ 16 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | ||
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE DRIVER
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
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Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 6V，9.5V | ||
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Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 1.2V，2.2V | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
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- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 305ns，20ns | - | ||
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，13ns | 6V，9.5V | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8-SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 0.8V，2.5V | ||
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|
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
- | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | ||
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|
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE DRIVER
|
- | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | ||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR HIGH SIDE SOT-23-6
|
- | 4.6 V ~ 5.5 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 65V | 18ns，16ns | 1.8V，3.9V | ||
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|
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 15ns，13ns | 6V，9.5V | ||
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|
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
- | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 115V | 12ns，9ns | 1V，2.4V | ||
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|
|
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16MLPQ
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad，14 Leads | 16-MLPQ (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FLYBACK CONVERTER SM8
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | SOT-223-8 | SM8 | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 305ns，20ns | - |
