- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Gate Type:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 33
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Automotive,AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 100V | - | 1A,1A | ||||
Infineon Technologies |
27,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.7V | 1.9A,2.3A | ||||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 2.5A,2.5A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 700V | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Automotive,AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | RC Input Circuit | Independent | 2 | N-Channel MOSFET | 100V | - | 1A,1A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HALF-BRIDGE 16MLPQ
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad,14 Leads | 16-MLPQ (4x4) | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16MLPQ
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad,14 Leads | 16-MLPQ (4x4) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A |