Découvrez les produits 14
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
PE29100A-X
pSemi
500
3 jours
-
MOQ: 500  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
- 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die Die - Synchronous Half-Bridge N-Channel MOSFET 100V 2.5ns,2.5ns -
MAX15025AATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Automotive,AEC-Q100 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN (3x3) Non-Inverting Independent Low-Side N-Channel MOSFET - 42ns,30ns 0.8V,2V
IXS839S1T/R
IXYS
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER SYNC BUCK 8SOIC
- 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 24V 20ns,15ns 0.8V,2V
MAX15025BATB+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Automotive,AEC-Q100 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 48ns,32ns 2V,4.25V
MAX15025CATB+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Automotive,AEC-Q100 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 42ns,30ns 0.8V,2V
MAX15025GATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
- 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 48ns,32ns -
MAX15025HATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
- 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 48ns,32ns -
MAX15025FATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
- 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 48ns,32ns -
MAX15025DATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Automotive,AEC-Q100 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 48ns,32ns 2V,4.25V
MAX15025EATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
- 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 48ns,32ns -
MAX15025BATB+
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Automotive,AEC-Q100 4.5 V ~ 28 V -40°C ~ 125°C 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 48ns,32ns 2V,4.25V
IXS839AQ2T/R
IXYS
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER SYNC BUCK 10QFN
- 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-QFN (3x3) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 24V 20ns,15ns 0.8V,2V
IXS839BQ2T/R
IXYS
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER SYNC BUCK 10QFN
- 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-QFN (3x3) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 24V 20ns,15ns 0.8V,2V
IX2204NETR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC IGBT GATE DVR DUAL 16SOIC
- -10 V ~ 25 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent Low-Side IGBT - -,8ns 0.8V,2V