- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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Découvrez les produits 42
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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|
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Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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|
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Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
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EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | PG-DSO-28 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
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|
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Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
- | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
HV GATE DRIVER SO-28
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SO | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，35ns | 0.8V，2.4V | 200mA，350mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
EiceDriver | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | PG-TSSOP-28 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | 1.1V，1.7V | - | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
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EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | PG-DSO-28-17 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | PG-DSO-28 | Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | 1.1V，1.7V | - | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28-SOIC
|
- | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 28-SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
- | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
Automotive，AEC-Q100 | 24 V ~ 150 V | -40°C ~ 125°C (TA) | 28-SOIC | Non-Inverting | 3-Phase | 6 | N-Channel MOSFET | 200V | 100ns，35ns | 0.7V，2.5V | 200mA，350mA |
