Découvrez les produits 12
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Package / Case Supplier Device Package Input Type Channel Type Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS23364DSTRPBF
Infineon Technologies
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HV 3PHASE 28-SOIC
28-SOIC (0.295",7.50mm Width) 28-SOIC Non-Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IR2214SSTRPBF
Infineon Technologies
Enquête
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MOQ: 2000  MPQ: 1
IC DVR HALF BRIDGE IC 24SSOP
24-SSOP (0.209",5.30mm Width) 24-SSOP Non-Inverting Independent 2 IGBT 1200V 24ns,7ns 0.8V,2V 2A,3A
IR21364STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28-SOIC
28-SOIC (0.295",7.50mm Width) 28-SOIC Non-Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IR2114SSTRPBF
Infineon Technologies
Enquête
-
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MOQ: 2000  MPQ: 1
IC DVR HALF BRIDGE 600V 24-SSOP
24-SSOP (0.209",5.30mm Width) 24-SSOP Non-Inverting Independent 2 IGBT 600V 24ns,7ns 0.8V,2V 2A,3A
IRS23364DJTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 500  MPQ: 1
IC GATE DRIVER HV 3PHASE 44-PLCC
44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Non-Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IR21362JTR
Infineon Technologies
Enquête
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-
MOQ: 500  MPQ: 1
IC DRIVER 3PHASE 600V 44-PLCC
44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Inverting,Non-Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21362STR
Infineon Technologies
Enquête
-
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MOQ: 1000  MPQ: 1
IC DRIVER 3PHASE 600V 28-SOIC
28-SOIC (0.295",7.50mm Width) 28-SOIC Inverting,Non-Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21362STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
28-SOIC (0.295",7.50mm Width) 28-SOIC Inverting,Non-Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21362JTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 500  MPQ: 1
IC DRIVER BRIDGE 3PHASE 44PLCC
44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Inverting,Non-Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21364JTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 500  MPQ: 1
IC DRIVER BRIDGE 3PHASE 44-PLCC
44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Non-Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IR21141SSTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DVR HALF BRIDGE 600V 24-SSOP
24-SSOP (0.209",5.30mm Width) 24-SSOP Non-Inverting Independent 2 IGBT 600V 24ns,7ns 0.8V,2V 2A,3A
IR22141SSTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DVR HALF BRIDGE IC 24SSOP
24-SSOP (0.209",5.30mm Width) 24-SSOP Non-Inverting Independent 2 IGBT 1200V 24ns,7ns 0.8V,2V 2A,3A