Découvrez les produits 12
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD05473FN-7
Diodes Incorporated
3,000
3 jours
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Synchronous Half-Bridge N-Channel MOSFET 50V 16ns,12ns 0.8V,2.4V 1.5A,2.5A
DGD05463FN-7
Diodes Incorporated
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV W-DFN3030-10
- 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 (type TH) Synchronous Half-Bridge N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V 1.5A,2.5A
DGD0506AM10-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE HV DRIVER MSOP-10
- 8 V ~ 14 V -40°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP Synchronous Half-Bridge N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V 1.5A,2A
DGD0506AFN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Synchronous Half-Bridge N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V 1.5A,2A
DGD0507AFN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Synchronous Half-Bridge N-Channel MOSFET 50V 16ns,18ns 0.8V,2.4V 1.5A,2A
DGD0506FN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV W-DFN3030-10
- 8 V ~ 14 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad W-DFN3030-10 Synchronous Half-Bridge N-Channel MOSFET 50V 17ns,12ns 1V,2.5V 1.5A,2.5A
DGD0507FN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV W-DFN3030-10
- 8 V ~ 14 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad W-DFN3030-10 Synchronous Half-Bridge N-Channel MOSFET 50V 17ns,13ns 1V,2.5V 1.5A,2.5A
UCC21222DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
4A/6A 2KVRMS DUAL CH ISO DR 8V
- 3 V ~ 5.5 V -40°C ~ 125°C (TA) 16-SOIC (0.154",3.90mm Width) 16-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET - 5ns,6ns 1.25V,1.6V 4A,6A
UCC21222QDRQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
4A/6A 2KVRMS DUAL CH ISO DR 8V
Automotive,AEC-Q100 3 V ~ 5.5 V -40°C ~ 150°C (TA) 16-SOIC (0.154",3.90mm Width) 16-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET - 5ns,6ns 1.25V,1.6V 4A,6A
DGD0547FN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
- 5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 (type TH) Synchronous Half-Bridge N-Channel MOSFET 50V 16ns,12ns 0.8V,2.4V 1.5A,2.5A
IX4340NTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 4000  MPQ: 1
5A,DUAL LOW-SIDE,NON-INVERTING
- 5 V ~ 20 V -55°C ~ 150°C 8-SOIC (0.154",3.90mm Width) 8-SOIC Independent Low-Side N-Channel,P-Channel MOSFET - 7ns,7ns 0.8V,2.5V 5A,5A
DGD05463M10-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
HV GATE DRIVER MSOP-10 T&R 2.5K
- 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP Synchronous Half-Bridge N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V 1.5A,2.5A