Découvrez les produits 10
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Package / Case Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2110STRPBF
Infineon Technologies
22,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
3.3 V ~ 20 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2A
IR2125STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
0 V ~ 18 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Single High-Side 1 IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IRS2110STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
10 V ~ 20 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2.5A,2.5A
DGD2110S16-13
Diodes Incorporated
Enquête
-
-
MOQ: 1500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SO
10 V ~ 20 V 16-SOIC (0.295",7.50mm Width) 16-SO Independent Half-Bridge 2 IGBT,N-Channel MOSFET 15ns,13ns 6V,9.5V 2.5A,2.5A
IR2110STR
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
3.3 V ~ 20 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2A
IR2125STR
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
0 V ~ 18 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Single High-Side 1 IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IX2R11S3T/R
IXYS
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRVR HALF BRIDGE 2A 16-SOIC
10 V ~ 35 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 8ns,7ns 6V,9.6V 2A,2A
SI9910DY-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR ADAPTIVE PWR 8SOIC
10.8 V ~ 16.5 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Single High-Side 1 N-Channel MOSFET 50ns,35ns - 1A,1A
IX2R11M6
IXYS
Enquête
-
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MOQ: 3000  MPQ: 1
IC DRVR HALF BRIDGE 2A 16-MLP
10 V ~ 35 V 16-VDFN Exposed Pad 16-MLP (7x6) Independent Half-Bridge 2 IGBT,N-Channel MOSFET 8ns,7ns 6V,9.5V 2A,2A
IX2R11M6T/R
IXYS
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRVR HALF BRIDGE 2A 16-MLP
10 V ~ 35 V 16-VDFN Exposed Pad 16-MLP (7x6) Independent Half-Bridge 2 IGBT,N-Channel MOSFET 8ns,7ns 6V,9.5V 2A,2A