Découvrez les produits 10
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
FAN73711MX
ON Semiconductor
42,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOP
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 4A,4A
FAN7393AMX
ON Semiconductor
27,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR HALF BRIDGE 14SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 2.5A,2.5A
FAN7171MX-F085
ON Semiconductor
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
Automotive,AEC-Q100 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 4A,4A
FAN7371MX
ON Semiconductor
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC DRIVER GATE HIGH SIDE 8SOP
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 4A,4A
IRS2011STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent Half-Bridge 2 N-Channel MOSFET 200V 0.7V,2.5V 1A,1A
AUIRS2113STR
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 6V,9.5V 2.5A,2.5A
FAN73912MX
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SOIC
- 12 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC - Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 1200V 6V,9.5V 2A,3A
FAN5109BMX
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR DUAL 12V 8-SOIC
- 10 V ~ 13.5 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET - 0.8V,2V -
IRS21956STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR HI/LOW SIDE 600V 20SOIC
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 0.8V,3.5V 500mA,500mA
FAN7171MX
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 4A,4A