Découvrez les produits 19
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
L6498LDTR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
- - - - - - - - - - -
L6494LDTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
- - - - - - - - - - -
TD350ETR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER IGBT/MOSFET 14-SOIC
12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
L6386ED013TR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE HV 14-SOIC
17V (Max) -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6386ADTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HV HI/LOW SIDE SOIC-14
17V (Max) -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6393DTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER HALF BRDGE 14SO
10 V ~ 20 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6392DTR
STMicroelectronics
Enquête
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-
MOQ: 2500  MPQ: 1
IC DRIVER HV HI/LOW SIDE SOIC-14
12.5 V ~ 20 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6391DTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HV HI/LOW SIDE
12.5 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6491DTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR 4A HIGH/LOW 14SOIC
10 V ~ 20 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge - IGBT,N-Channel MOSFET 600V 15ns,15ns 1.45V,2V 4A,4A
L6386D013TR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE HV 14-SOIC
17V (Max) -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
TD350IDT
STMicroelectronics
Enquête
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-
MOQ: 2500  MPQ: 1
IC DRIVER MOS/IGBT ADV 14SOIC
12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
E-L6386D013TR
STMicroelectronics
Enquête
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-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE HV 14-SOIC
17V (Max) -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
DGD21064S14-13
Diodes Incorporated
Enquête
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MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14SO
10 V ~ 20 V -40°C ~ 125°C (TA) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V 290mA,600mA
DGD21904MS14-13
Diodes Incorporated
Enquête
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-
MOQ: 2500  MPQ: 1
HV GATE DRIVER SO-14 T&R 2.5K
10 V ~ 20 V -40°C ~ 125°C (TA) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,20ns 0.8V,2.5V 4.5A,4.5A
DGD21904S14-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14SO
10 V ~ 20 V -40°C ~ 125°C (TA) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,20ns 0.8V,2.5V 4.5A,4.5A
DGD21844S14-13
Diodes Incorporated
Enquête
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MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14SO
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.4A,1.8A
DGD21064MS14-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
HV GATE DRIVER SO-14 T&R 2.5K
10 V ~ 20 V -40°C ~ 125°C (TA) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V 290mA,600mA
DGD21084S14-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14SO
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V 200mA,600mA
DGD21814S14-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14SO
10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A