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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 18
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
10,000
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
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- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，2.5V | 290mA，600mA | ||
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|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
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|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
Automotive，AEC-Q100 | 24 V ~ 150 V | -40°C ~ 125°C (TA) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | N-Channel MOSFET | 200V | 0.7V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI/LOW SIDE 600V SO-14
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA | ||
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|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14SO
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 14-SOIC (0.154"，3.90mm Width) | 14-SO | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，2.5V | 290mA，600mA | ||
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|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-8 T&R 2.5K
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-14 T&R 2.5K
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 14-SOIC (0.154"，3.90mm Width) | 14-SO | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SO | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，2.5V | 200mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 290mA，600mA |
