Découvrez les produits 25
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
TPS51604DSGR
Texas Instruments
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
- 4.5 V ~ 5.5 V -40°C ~ 105°C (TJ) 8-WSON (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
TPS51604DSGT
Texas Instruments
1,500
3 jours
-
MOQ: 250  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
- 4.5 V ~ 5.5 V -40°C ~ 105°C (TJ) 8-WSON (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
SLG55021-200010V
Dialog Semiconductor GmbH
Enquête
-
-
MOQ: 3000  MPQ: 1
N-CHANNEL MOSFET DRIVERS WITH IN
- 4.75 V ~ 5.25 V -55°C ~ 125°C 8-TDFN (2x2) CMOS Single High-Side 1 N-Channel MOSFET - - 0.4V,5.5V 32μA,400μA
LM5109BQNGTTQ1
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
Automotive,AEC-Q100 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 15ns,15ns 0.8V,2.2V 1A,1A
MAX15492GTA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC HALF-BRIDGE TDFN-8
- 4.2 V ~ 5.5 V -40°C ~ 150°C (TJ) 8-TDFN-EP (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 30V 14ns,7ns - 2.2A,2.7A
TPS51604QDSGRQ1
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DRIVER SYNC 8WSON
Automotive,AEC-Q100 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-WSON (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 30ns,8ns 0.6V,2.65V -
TPS51604QDSGTQ1
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC MOSFET DRIVER SYNC 8WSON
Automotive,AEC-Q100 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-WSON (2x2) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 30ns,8ns 0.6V,2.65V -
ISL89163FRTCZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
- 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-TDFN (3x3) Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
LTC4449EDCB#TRMPBF
Linear Technology/Analog Devices
9,500
3 jours
-
MOQ: 500  MPQ: 1
IC MOSFET DRIVER N-CH 8-DFN
- 4 V ~ 6.5 V -40°C ~ 125°C (TJ) 8-DFN (2x3) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 42V 8ns,7ns 3V,6.5V 3.2A,4.5A
LTC4449IDCB#TRMPBF
Linear Technology/Analog Devices
500
3 jours
-
MOQ: 500  MPQ: 1
IC SYNC MOSFET DRIVER N-CH 8DFN
- 4 V ~ 6.5 V -40°C ~ 125°C (TJ) 8-DFN (2x3) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 42V 8ns,7ns 3V,6.5V 3.2A,4.5A
MCP14A0303T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 3300  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
- 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting Independent High-Side 2 IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0305T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 3300  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
- 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Inverting,Non-Inverting Independent High-Side 2 IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0453T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 3300  MPQ: 1
4.5A MATCHED,HIGH -SPEED,LOW-S
- 4.5 V ~ 18 V -40°C ~ 125°C (TA) 8-TDFN (2x3) Inverting Single Low-Side 2 IGBT - 12ns,12ns 0.8V,2V 4.5A,4.5A
MCP14A0454T-E/MNY
Microchip Technology
3,300
3 jours
-
MOQ: 3300  MPQ: 1
4.5A MATCHED,HIGH -SPEED,LOW-S
- 4.5 V ~ 18 V -40°C ~ 125°C (TA) 8-TDFN (2x3) Non-Inverting Single Low-Side 2 IGBT - 12ns,12ns 0.8V,2V 4.5A,4.5A
MCP14A0304T-E/MNY
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
3.0A MATCHED,HIGH -SPEED,LOW-S
- 4.5 V ~ 18 V -40°C ~ 125°C 8-TDFN (2x3) Non-Inverting Independent High-Side 2 IGBT - 12ns,12ns 0.8V,2V 3A,3A
MCP14A0451T-E/RW
Microchip Technology
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DRIVER 4.5A 8WDFN
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-WDFN (2x2) Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 9.5ns,9ns 0.8V,2V 4.5A,4.5A
MCP14A0455T-E/MNY
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
4.5A MATCHED,HIGH -SPEED,LOW-S
- 4.5 V ~ 18 V -40°C ~ 125°C (TA) 8-TDFN (2x3) Inverting,Non-Inverting Single Low-Side 2 IGBT - 12ns,12ns 0.8V,2V 4.5A,4.5A
LM5109BQNGTRQ1
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
Automotive,AEC-Q100 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 15ns,15ns 0.8V,2.2V 1A,1A
MCP14A0153T-E/MNY
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
IC MOSFET DVR 1.5A DUAL 8TDFN
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TDFN (2x3) Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 11.5ns,10ns 0.8V,2V 1.5A,1.5A
MCP14A0154T-E/MNY
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
IC MOSFET DVR 1.5A DUAL 8TDFN
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TDFN (2x3) Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 11.5ns,10ns 0.8V,2V 1.5A,1.5A