- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Channel Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 83
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Renesas Electronics America Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
6,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
-40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
-40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
-40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
-40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
-40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
-40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET SGL HS 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 4ns，4ns | 0.6V，2.4V | 4A，4A |
