- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 335
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
30,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 500mA，500mA | ||
|
|
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Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 500mA，500mA | ||
|
|
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Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | - | - | 50ns，90ns | 500mA，500mA | ||
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|
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ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | ||
|
|
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ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 10.6A，11.4A | ||
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|
|
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
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|
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Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
HIGH SIDE PROTECTION CONTROL
|
- | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 24μA，2.2mA | ||
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Analog Devices Inc. |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 4A，4A | ||
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|
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Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
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|
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Microchip Technology |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC MOSFET DVR HI/LOW SIDE 8ML
|
- | 2.75 V ~ 30 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad，8-MLF? | 8-MLF? (3x3) | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | ||
|
|
|
Texas Instruments |
3,500
|
3 jours |
-
|
MOQ: 3500 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Automotive，AEC-Q100 | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 24μA，2.2mA | ||
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|
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Texas Instruments |
19,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Automotive，AEC-Q100 | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 24μA，2.2mA | ||
|
|
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Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSF HI/LO SIDE 8SOIC
|
- | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - | ||
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|
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Renesas Electronics America Inc. |
7,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER QUAD HS NON-INV 16QSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SSOP (0.154"，3.90mm Width) | 16-QSOP | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
5,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER QUAD 40MHZ HS 16-QFN
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
4,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER QUAD HS NON-INV 16SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 2A，2A | ||
|
|
|
ON Semiconductor |
75,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
- | 5 V ~ 18 V | -40°C ~ 125°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 19ns，13ns | 2.5A，2.8A | ||
|
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A |
