- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 494
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
30,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8ns,7ns | - | 4A,4A | ||||
STMicroelectronics |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
- | 17V (Max) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,40ns | 1.1V,1.8V | 400mA,650mA | ||||
Infineon Technologies |
17,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | 4A,4A | ||||
Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | - | ||||
Renesas Electronics America Inc. |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Infineon Technologies |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
HI/LO SIDE DRVR 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns,20ns | 0.7V,2.2V | 1A,1A | ||||
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 3A,3A | ||||
STMicroelectronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8SOIC
|
- | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.5V,3.6V | 400mA,650mA | ||||
Analog Devices Inc. |
22,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
- | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC PWR DRIVER 6SON
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns,3.5ns | 1.08V,1.93V | 4A,6A | ||||
Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 48-MLPQ
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 48-VFQFN Exposed Pad,34 Leads | 48-MLPQ,34 Leads (7x7) | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Texas Instruments |
1,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8ns,7ns | - | 4A,4A |