PMIC - Pilotes de porte - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Input Type	Channel Type	Driven Configuration	Number of Drivers	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Current - Peak Output (Source, Sink)
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Input Type	Channel Type	Driven Configuration	Number of Drivers	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Current - Peak Output (Source, Sink)
	MAX17601ATA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR 4A DUAL 8TDFN MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8TDFN	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN (3x3)	Non-Inverting	Independent	Low-Side	2	-	40ns，25ns	4A，4A
	MAX17600ATA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR 4A DUAL 8TDFN MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8TDFN	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN-EP (3x3)	Inverting	Independent	Low-Side	2	-	40ns，25ns	4A，4A
	TPS28225TDRQ1	Texas Instruments	Enquête	-	-	IC MOSFET DVR SINK SYNC 4A 8SOIC MOQ: 2500 MPQ: 1	IC MOSFET DVR SINK SYNC 4A 8SOIC	Automotive，AEC-Q100	4.5 V ~ 8.8 V	-40°C ~ 125°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Non-Inverting	Synchronous	Half-Bridge	2	33V	10ns，10ns	2A，2A
	MAX5054BATA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR DUAL 8-TDFN MOQ: 2500 MPQ: 1	IC MOSFET DRVR DUAL 8-TDFN	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN-EP (3x3)	Inverting，Non-Inverting	Independent	Low-Side	2	-	32ns，26ns	4A，4A
	MAX5078BATT+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRIVER 6-TDFN MOQ: 2500 MPQ: 1	IC MOSFET DRIVER 6-TDFN	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	6-WDFN Exposed Pad	6-TDFN-EP (3x3)	Inverting，Non-Inverting	Single	Low-Side	1	-	32ns，26ns	4A，4A
	MAX17600AUA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR 4A DUAL 8UMAX MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8UMAX	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad	8-uMax-EP	Inverting	Independent	Low-Side	2	-	40ns，25ns	4A，4A
	MAX17601AUA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR 4A DUAL 8UMAX MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8UMAX	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad	8-uMax-EP	Non-Inverting	Independent	Low-Side	2	-	40ns，25ns	4A，4A
	MAX17602AUA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR 4A DUAL 8UMAX MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8UMAX	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad	8-uMax-EP	Inverting，Non-Inverting	Independent	Low-Side	2	-	40ns，25ns	4A，4A
	MAX17600ASA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR 4A DUAL 8SOIC MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8SOIC	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Inverting	Independent	Low-Side	2	-	40ns，25ns	4A，4A
	MAX17601ASA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR 4A DUAL 8SOIC MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8SOIC	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Non-Inverting	Independent	Low-Side	2	-	40ns，25ns	4A，4A
	MAX17602ASA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR 4A DUAL 8SOIC MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8SOIC	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Inverting，Non-Inverting	Independent	Low-Side	2	-	40ns，25ns	4A，4A
	MAX17602ATA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR 4A DUAL 8TDFN MOQ: 2500 MPQ: 1	IC MOSFET DRVR 4A DUAL 8TDFN	-	4 V ~ 14 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN (3x3)	Inverting，Non-Inverting	Independent	Low-Side	2	-	40ns，25ns	4A，4A
	MAX5056BASA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR DUAL 8-SOIC MOQ: 2500 MPQ: 1	IC MOSFET DRVR DUAL 8-SOIC	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Non-Inverting	Independent	Low-Side	2	-	32ns，26ns	4A，4A
	MAX5055AASA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR DUAL 8-SOIC MOQ: 2500 MPQ: 1	IC MOSFET DRVR DUAL 8-SOIC	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Inverting	Independent	Low-Side	2	-	32ns，26ns	4A，4A
	MAX5055BASA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR DUAL 8-SOIC MOQ: 2500 MPQ: 1	IC MOSFET DRVR DUAL 8-SOIC	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Inverting	Independent	Low-Side	2	-	32ns，26ns	4A，4A
	MAX5057BASA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR DUAL 8-SOIC MOQ: 2500 MPQ: 1	IC MOSFET DRVR DUAL 8-SOIC	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Inverting，Non-Inverting	Independent	Low-Side	2	-	32ns，26ns	4A，4A
	MAX5056AASA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR DUAL 8-SOIC MOQ: 2500 MPQ: 1	IC MOSFET DRVR DUAL 8-SOIC	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Non-Inverting	Independent	Low-Side	2	-	32ns，26ns	4A，4A
	MAX5057AASA+T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR DUAL 8-SOIC MOQ: 0 MPQ: 1	IC MOSFET DRVR DUAL 8-SOIC	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Inverting，Non-Inverting	Independent	Low-Side	2	-	32ns，26ns	4A，4A
	MAX5078BATT/V+T	Maxim Integrated	Enquête	-	-	IC MOSFET DVR 4A 20NS 6-TDFN MOQ: 2500 MPQ: 1	IC MOSFET DVR 4A 20NS 6-TDFN	Automotive，AEC-Q100	4 V ~ 15 V	-40°C ~ 150°C (TJ)	6-WDFN Exposed Pad	6-TDFN-EP (3x3)	Inverting，Non-Inverting	Single	Low-Side	1	-	32ns，26ns	4A，4A
	MAX5054BATA-T	Maxim Integrated	Enquête	-	-	IC MOSFET DRVR DUAL 8-TDFN MOQ: 10000 MPQ: 1	IC MOSFET DRVR DUAL 8-TDFN	-	4 V ~ 15 V	-40°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-TDFN-EP (3x3)	Inverting，Non-Inverting	Independent	Low-Side	2	-	32ns，26ns	4A，4A