Découvrez les produits 13
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
2EDL23N06PJXUMA1
Infineon Technologies
7,500
3 jours
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MOQ: 2500  MPQ: 1
IC DRIVER GATE HALF BRIDGE 14DSO
10 V ~ 17.5 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-DSO Non-Inverting Independent 2 N-Channel,P-Channel MOSFET 600V 48ns,37ns 1.8A,2.3A
2EDL23I06PJXUMA1
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14DSO
10 V ~ 25 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) PG-DSO-14 Non-Inverting Independent 2 IGBT 600V 48ns,37ns 2.3A,2.3A
2EDL05N06PFXUMA1
Infineon Technologies
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER GATE HALF BRIDGE 8DSO
10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-DSO Non-Inverting Independent 2 IGBT,N-Channel,P-Channel MOSFET 600V 48ns,24ns -
2EDL05I06PFXUMA1
Infineon Technologies
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Non-Inverting Independent 2 IGBT 600V 48ns,24ns 500mA,500mA
2EDL05I06PJXUMA1
Infineon Technologies
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR BRDG 60V .25A DSO14
10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) PG-DSO-14 Non-Inverting Independent 2 N-Channel,P-Channel MOSFET 600V 48ns,24ns 250mA,500mA
6EDL04I06PTXUMA1
Infineon Technologies
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DRVR DSO28
13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) PG-DSO-28 Non-Inverting 3-Phase 6 IGBT,N-Channel,P-Channel MOSFET 600V 60ns,26ns -
2EDL05N06PJXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER GATE HALF BRIDGE 14DSO
10 V ~ 25 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-DSO Non-Inverting Independent 2 IGBT,N-Channel,P-Channel MOSFET 600V 48ns,24ns -
6ED003L02F2XUMA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR 600V 3PHASE 28TSSOP
13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-TSSOP (0.173",4.40mm Width) PG-TSSOP-28 Inverting 3-Phase 6 IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns -
6EDL04N06PTXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR DSO28
10 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) PG-TSSOP-28 Non-Inverting 3-Phase 6 IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns -
6EDL04I06NTXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28DSO
13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) PG-DSO-28-17 Non-Inverting 3-Phase 6 IGBT,N-Channel,P-Channel MOSFET 600V 60ns,26ns -
6ED003L06F2XUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR DSO28
13 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) PG-DSO-28 Inverting 3-Phase 6 IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns -
6EDL04N02PRXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR 200V 3PHASE 28TSSOP
10 V ~ 17.5 V -40°C ~ 125°C (TJ) 28-TSSOP (0.173",4.40mm Width) PG-TSSOP-28 Non-Inverting 3-Phase 6 IGBT,N-Channel,P-Channel MOSFET 200V 60ns,26ns -
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 Non-Inverting Independent 2 IGBT 600V 48ns,24ns 500mA,500mA