- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 8
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | 0.6V,2.4V | 4A,4A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | 0.6V,2.4V | 4A,4A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | 0.6V,2.4V | 4A,4A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | 0.6V,2.4V | 4A,4A | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 1.5V,1.9V | 10A,10A | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 1.5V,1.9V | 10A,10A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 8SOIC
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 10A,10A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 10A,10A |