Supplier Device Package:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 85
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2110STRPBF
Infineon Technologies
22,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
- 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V 2A,2A
IR2010STRPBF
Infineon Technologies
5,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 200V 10ns,15ns 6V,9.5V 3A,3A
IR2113STRPBF
Infineon Technologies
7,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
- 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V 2A,2A
IR2125STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
- 0 V ~ 18 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 500V 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IRS2113STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V 2.5A,2.5A
IR2112STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V 250mA,500mA
UC3707DWTR
Texas Instruments
2,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DUAL CH PWR DRIVER 16-SOIC
- 5 V ~ 40 V 0°C ~ 70°C (TA) 16-SOIC Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 40ns,40ns 0.8V,2.2V 1.5A,1.5A
FAN7392MX
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR MONO HI/LO 16SOP
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,20ns 4.5V,9.5V 3A,3A
AUIRS2113STR
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,15ns 6V,9.5V 2.5A,2.5A
DGD2113S16-13
Diodes Incorporated
Enquête
-
-
MOQ: 1500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SO
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,13ns 6V,9.5V 2.5A,2.5A
FAN73912MX
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SOIC
- 12 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC - Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 1200V 25ns,15ns 6V,9.5V 2A,3A
IRS2110STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V 2.5A,2.5A
IR2213STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR HI/LO SIDE 16-SOIC
- 12 V ~ 20 V 125°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 1200V 25ns,17ns 6V,9.5V 2A,2.5A
2EDS8165HXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
DRIVER IC
EiceDriver 3 V ~ 3.5 V -40°C ~ 150°C (TJ) PG-DSO-16-30 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 1A,2A
2EDS8265HXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
DRIVER IC
EiceDriver 3 V ~ 3.5 V -40°C ~ 150°C (TJ) PG-DSO-16-30 Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 4A,8A
DGD2110S16-13
Diodes Incorporated
Enquête
-
-
MOQ: 1500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SO
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 15ns,13ns 6V,9.5V 2.5A,2.5A
IX2113BTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HIGH/LOW 600V 16SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 600V 9.4ns,9.7ns 6V,9.5V 2A,2A
IRS2112STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR HI/LO SIDE 16-SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V 290mA,600mA
IR25607STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET IGBT DRIVER 16SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V 2.5A,2.5A
UC3706DWTR
Texas Instruments
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DUAL OUTPUT DRIVER 16-SOIC
- 5 V ~ 40 V 0°C ~ 70°C (TA) 16-SOIC Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 40ns,30ns 0.8V,2.2V 1.5A,1.5A