Découvrez les produits 25
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
UCC27511DBVR
Texas Instruments
57,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-6
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,8A
UCC27517AQDBVRQ1
Texas Instruments
15,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Automotive,AEC-Q100 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
UCC27511AQDBVRQ1
Texas Instruments
9,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6SOT23
Automotive,AEC-Q100 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,8A
UCC27517DBVT
Texas Instruments
9,250
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
UCC27511DBVT
Texas Instruments
4,500
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-6
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,8A
UCC27512DRSR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSON
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 6-WDFN Exposed Pad 6-SON-EP (3x3) Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,8A
UCC27511ADBVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
SINGLE DRIVER
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,8A
UCC27517ADBVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
UCC27511ADBVT
Texas Instruments
500
3 jours
-
MOQ: 250  MPQ: 1
SINGLE DRIVER
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,8A
UCC27516DRST
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6SON
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 6-WDFN Exposed Pad 6-SON-EP (3x3) Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
MP18021HN-LF-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER
- 9 V ~ 16 V -40°C ~ 140°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 12ns,9ns 2.5A,2.5A
MP1907GQ-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE DRIVER
- 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-QFN (3x3) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 12ns,9ns 2.5A,2.5A
UCC27517ADBVT
Texas Instruments
750
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
UCC27512MDRSTEP
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSON
- 4.5 V ~ 18 V -55°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-SON (3x3) Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,8A
UCC27517DBVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
UCC27516DRSR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6SON
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 6-WDFN Exposed Pad 6-SON-EP (3x3) Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
MP18021HN-A-LF-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER
- 9 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 12ns,9ns 2.5A,2.5A
MP18021HQ-A-LF-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE DRIVER
- 9 V ~ 18 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-QFN (3x3) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 12ns,9ns 2.5A,2.5A
UCC27512DRST
Texas Instruments
Enquête
-
-
MOQ: 750  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSON
- 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 6-WDFN Exposed Pad 6-SON-EP (3x3) Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,8A
MPQ18021HS-A-LF-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER
- 9 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 115V 12ns,9ns 2.5A,2.5A