Découvrez les produits 14
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DRV8304HRHAT
Texas Instruments
250
3 jours
-
MOQ: 250  MPQ: 1
38V THREE-PHASE SMART GATE DRIVE
6 V ~ 38 V -40°C ~ 125°C 40-VFQFN Exposed Pad 40-VQFN (6x6) Non-Inverting 3-Phase High-Side or Low-Side N-Channel MOSFET - 300ns,150ns 0.8V,1.5V 150mA,300mA
TD310IDT
STMicroelectronics
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER MOS/IGBT TRIPLE 16SOIC
4 V ~ 16 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SO Inverting,Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - - 0.8V,2V -
DRV8304HRHAR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
38V 3-PHASE SMART GATE DRIVER
6 V ~ 38 V -40°C ~ 125°C 40-VFQFN Exposed Pad 40-VQFN (6x6) Non-Inverting 3-Phase High-Side or Low-Side N-Channel MOSFET - 300ns,150ns 0.8V,1.5V 150mA,300mA
L9380-TR-LF
STMicroelectronics
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER MOSFET SO20
7 V ~ 18.5 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SO Non-Inverting Independent High-Side N-Channel MOSFET - - 1V,3V -
HIP4083ABZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HISIDE N-CH 3PH 16SOIC
7 V ~ 15 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Inverting 3-Phase High-Side N-Channel MOSFET 95V 35ns,30ns 1V,2.5V -
HIP4083ABT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HISIDE N-CH 3PH 16SOIC
7 V ~ 15 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Inverting 3-Phase High-Side N-Channel MOSFET 95V 35ns,30ns 1V,2.5V -
L9380-TR
STMicroelectronics
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR TRPL HI SIDE SO20
7 V ~ 18.5 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SO Non-Inverting Independent High-Side N-Channel MOSFET - - 1V,3V -
IRS21952STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
BD6563FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET 3CH 16SSOP
10 V ~ 25 V -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Non-Inverting Independent Low-Side IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
A6861KLPTR-T
Allegro MicroSystems,LLC
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE DRVR HIGH-SIDE 16TSSOP
4.5 V ~ 50 V -40°C ~ 150°C (TJ) 16-TSSOP (0.173",4.40mm Width) Exposed Pad 16-TSSOP-EP Non-Inverting 3-Phase High-Side N-Channel MOSFET - - 0.8V,2V -
A6862KLPTR-T
Allegro MicroSystems,LLC
Enquête
-
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MOQ: 4000  MPQ: 1
IC GATE DRIVER 16TSSOP
4.5 V ~ 50 V -40°C ~ 150°C (TJ) 16-TSSOP (0.173",4.40mm Width) Exposed Pad 16-TSSOP Non-Inverting 3-Phase High-Side N-Channel MOSFET - - 0.4V,0.7V -
LTC1165CS8#TRPBF
Linear Technology/Analog Devices
Enquête
-
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MOQ: 2500  MPQ: 1
IC MOSFET DVR HI-SIDE TRPL 8SOIC
1.8 V ~ 6 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent High-Side N-Channel MOSFET - - - -
LTC1163CS8#TRPBF
Linear Technology/Analog Devices
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DVR HI-SIDE TRPL 8SOIC
1.8 V ~ 6 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent High-Side N-Channel MOSFET - - - -