Series:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 71
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
EL7457CUZ-T7
Renesas Electronics America Inc.
7,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER QUAD HS NON-INV 16QSOP
- 4.5 V ~ 18 V 16-SSOP (0.154",3.90mm Width) 16-QSOP Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CLZ-T7
Renesas Electronics America Inc.
5,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QFN
- 4.5 V ~ 18 V 16-VQFN Exposed Pad 16-QFN (4x4) Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CSZ-T7
Renesas Electronics America Inc.
4,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER QUAD HS NON-INV 16SOIC
- 4.5 V ~ 18 V 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
SC1301AISKTRT
Semtech Corporation
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR 2A LOWSIDE SOT23-5
- 4.5 V ~ 16.5 V SC-74A,SOT-753 SOT-23-5 Non-Inverting Single Low-Side 1 N-Channel MOSFET - 20ns,20ns 0.8V,2V 2A,2A
MIC5020YM-TR
Microchip Technology
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSF LO SIDE HS 8-SOIC
- 11 V ~ 50 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Low-Side 1 N-Channel MOSFET - 700ns,500ns 0.8V,2V -
SC1301BISKTRT
Semtech Corporation
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR 2A LOWSIDE SOT23-5
- 4.5 V ~ 16.5 V SC-74A,SOT-753 SOT-23-5 Inverting Single Low-Side 1 N-Channel MOSFET - 20ns,20ns 0.8V,2V 2A,2A
MAX4420ESA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SGL 6A HS 8-SOIC
- 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX4428ESA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR INV/NONINV 8-SOIC
- 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
EL7457CLZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QFN
- 4.5 V ~ 18 V 16-VQFN Exposed Pad 16-QFN (4x4) Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CUZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QSOP
- 4.5 V ~ 18 V 16-SSOP (0.154",3.90mm Width) 16-QSOP Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
MAX4427ESA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRV DUAL NONINV 8-SOIC
- 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
EL7457CSZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-SOIC
- 4.5 V ~ 18 V 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
MAX627ESA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
- 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
MAX628ESA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
- 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
EL7457CLZ-T7A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 250  MPQ: 1
IC DVR CMOS 40MHZ QUAD 16QFN
- 4.5 V ~ 18 V 16-VQFN Exposed Pad 16-QFN-EP (4x4) Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CUZ-T7A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 250  MPQ: 1
IC DVR CMOS 40MHZ QUAD 16QSOP
- 4.5 V ~ 18 V 16-SSOP (0.154",3.90mm Width) 16-QSOP Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CSZ-T7A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 250  MPQ: 1
IC DVR CMOS 40MHZ QUAD 16SOIC
- 4.5 V ~ 18 V 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
MIC5021BM-TR
Microchip Technology
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET HISIDE HS 8SOIC
- 12 V ~ 36 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 400ns,400ns 0.8V,2V -
MIC5020BM-TR
Microchip Technology
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSF LO SIDE HS 8-SOIC
- 11 V ~ 50 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Low-Side 1 N-Channel MOSFET - 700ns,500ns 0.8V,2V -
EL7457CL-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QFN
- 4.5 V ~ 18 V 16-VQFN Exposed Pad 16-QFN (4x4) Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A