Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX8552EUB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET HS 10-UMAX
-40°C ~ 150°C (TJ) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-uMAX Non-Inverting Synchronous Half-Bridge 2 - 14ns,9ns 0.8V,2.5V -
MAX8552ETB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET HS 10-TDFN
-40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN (3x3) Non-Inverting Synchronous Half-Bridge 2 - 14ns,9ns 0.8V,2.5V -
NCP5351DR2
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL 4A 8SOIC
-30°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Synchronous Half-Bridge 2 25V 8ns,14ns 0.8V,2V 4A,4A
ISL6801ABT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HISIDE BOOTSTRAP 8SOIC
-40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent High-Side 1 120V 200ns,200ns 1.4V,3V 200mA,200mA
NCP5351MNR2
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR SYNC BUCK MOSF 4A 10DFN
-30°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Inverting,Non-Inverting Synchronous Half-Bridge 2 25V 8ns,14ns 0.8V,2V 4A,4A
NCP5351MNR2G
ON Semiconductor
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRVR SYNC BUCK MOSF 4A 10DFN
-30°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Inverting,Non-Inverting Synchronous Half-Bridge 2 25V 8ns,14ns 0.8V,2V 4A,4A
NCP5351DR2G
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL 4A 8SOIC
-30°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Synchronous Half-Bridge 2 25V 8ns,14ns 0.8V,2V 4A,4A