Voltage - Supply:
Operating Temperature:
Input Type:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 3
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
BS2103F-E2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SOP
10 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 200ns,100ns 1V,2.6V 60mA,130mA
BS2100F-E2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET
10 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 600V 200ns,100ns 1V,2.6V 60mA,130mA
BS2101F-E2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
600V HIGH VOLTAGE HIGH & LOW-SID
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