- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 341
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
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|
|
ON Semiconductor |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8-SOP
|
- | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 50ns，30ns | 1.2V，2.9V | 350mA，650mA | ||
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|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 60ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
42,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC HALF BRIDGE GATE DRIVER 8-SOP
|
- | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 50ns，30ns | 1.2V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HISIDE 2CH 14-SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 50ns，30ns | 1.3V，2.5V | 350mA，650mA | ||
|
|
|
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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STMicroelectronics |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
- | 17V (Max) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
|
|
|
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
ON Semiconductor |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，15ns | 0.8V，2.5V | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
17,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
Infineon Technologies |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-DSO | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 48ns，37ns | 1.1V，1.7V | 1.8A，2.3A | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 48ns，37ns | 1.1V，1.7V | 2.3A，2.3A |
