- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 66
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
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Texas Instruments |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
|
|
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Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC NONINVERT FET DRVR SOT-23-5
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
9,250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5L
|
μHVIC | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 85ns，40ns | 0.6V，2.7V | 300mA，550mA | ||
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|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
- | 5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 19ns，13ns | 0.8V，2V | 2.5A，2.8A | ||
|
|
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Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC NONINVERT FET DRVR SOT-23-5
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
1,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR FET/IGBT SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | Inverting，Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
2,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
1,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 2CH LOSIDE SOT23-5
|
- | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns (Max) | - | 800mA，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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|
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Semtech Corporation |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 2A LOWSIDE SOT23-5
|
- | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A |
