- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 599
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Single | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | - | 10A，10A | ||
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|
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Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | - | 5A，5A | ||
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Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Single | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | - | 10A，10A | ||
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|
|
Diodes Incorporated |
33,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | 8A，8A | ||
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Infineon Technologies |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 1.5A，1.5A | ||
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|
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Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Single | High-Side or Low-Side | N-Channel MOSFET | - | 450ns，21ns | - | 2.5A，6A | ||
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ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Non-Inverting | Single | High-Side | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
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ON Semiconductor |
42,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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Texas Instruments |
22,500
|
3 jours |
-
|
MOQ: 4500 MPQ: 1
|
IC MOSFET GATE DVR TINY 7A 6WSON
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.3V | 3A，7A | ||
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Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
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Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DVR TINY 7A 6WSON
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.3V | 3A，7A | ||
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Texas Instruments |
8,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DRIVER 7A 8MSOP
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.3V | 3A，7A | ||
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Texas Instruments |
57,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
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Texas Instruments |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
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STMicroelectronics |
25,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-SOIC
|
- | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Single | High-Side | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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|
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ON Semiconductor |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | ||
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|
|
ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
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|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA |
