Découvrez les produits 32
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
LM5112SDX/NOPB
Texas Instruments
22,500
3 jours
-
MOQ: 4500  MPQ: 1
IC MOSFET GATE DVR TINY 7A 6WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
LM5112SD/NOPB
Texas Instruments
9,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET GATE DVR TINY 7A 6WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
LM5112MY/NOPB
Texas Instruments
8,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET GATE DRIVER 7A 8MSOP
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
LM5112MYX/NOPB
Texas Instruments
3,500
3 jours
-
MOQ: 3500  MPQ: 1
IC MOSFET GATE DRIVER 7A 8MSOP
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
IR2304STRPBF
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
LM5112Q1SDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
MOSFET GATE DVR TINY 7A 6WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
IR7304STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 700V 200ns,100ns 60mA,130mA
2EDN7424RXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE DRIVER 8TSSOP
EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) PG-TSSOP-8 Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 6.4ns,5.4ns 4A,4A
2EDN7424FXTMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER DSO8
EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8-60 Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 6.4ns,5.4ns 4A,4A
LM5112Q1SD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET GATE DVR TINY 7A 6WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
EMB1412MYE/NOPB
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC DRIVER MOSFET 3A 8MSOP
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 14ns,12ns 3A,7A
EMB1412MY/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER MOSFET 3A 8MSOP
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 14ns,12ns 3A,7A
IR25601STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC HALF BRIDGE DRIVER 8SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
SM74101SDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DRIVER 6WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Inverting,Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 14ns,12ns 3A,7A
SM74101SD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER 6WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Inverting,Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 14ns,12ns 3A,7A
LM5112SDX
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC MOSFET GATE DVR TINY 7A 6WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
LM5112SD
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET GATE DVR TINY 7A 6WSON
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
LM5112MY
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET GATE DRIVER 7A 8MSOP
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
LM5112MYX
Texas Instruments
Enquête
-
-
MOQ: 3500  MPQ: 1
IC MOSFET GATE DRIVER 7A 8MSOP
- 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,12ns 3A,7A
NCP5104DR2G
ON Semiconductor
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE HV 8-SOIC
- 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 250mA,500mA