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- Series：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 2,639
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
HIGH SIDE PROTECTION CONTROL
|
- | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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ON Semiconductor |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
20,000
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
|
- | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 1μs，1μs | 0.9V，2.7V | - | ||
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Analog Devices Inc. |
7,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Renesas Electronics America Inc. |
13,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Infineon Technologies |
12,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
HI/LO SIDE DRVR 8SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
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Texas Instruments |
7,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
ICMOSFET DVR W/LOSS PROT 8-SOIC
|
- | 7 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 1.5V，3.5V | - | ||
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Texas Instruments |
5,000
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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Microchip Technology |
5,000
|
3 jours |
-
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MOQ: 5000 MPQ: 1
|
IC MOSFET DVR HI/LOW SIDE 8ML
|
- | 2.75 V ~ 30 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad，8-MLF? | 8-MLF? (3x3) | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Texas Instruments |
3,500
|
3 jours |
-
|
MOQ: 3500 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Automotive，AEC-Q100 | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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Infineon Technologies |
22,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
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Texas Instruments |
19,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Automotive，AEC-Q100 | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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|
|
Texas Instruments |
7,000
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
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|
|
Texas Instruments |
22,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOIC
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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|
|
Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOIC
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A |
