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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 2,639
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
Enquête
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MOQ: 500 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns,45ns | 0.8V,2.4V | 2.5A,2.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns,45ns | 0.8V,2.4V | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DRIVER VR12.5 8DFN
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- | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 40V | 16ns,11ns | 0.6V,3.3V | - | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC DRIVER MOSF QUAD
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns,45ns | 0.8V,2.4V | 2.5A,2.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSF QUAD
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns,45ns | 0.8V,2.4V | 2.5A,2.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
|
IC DRIVER MOSF QUAD
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns,45ns | 0.8V,2.4V | 2.5A,2.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSF QUAD
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns,45ns | 0.8V,2.4V | 2.5A,2.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC DRIVER MOSF QUAD
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns,45ns | 0.8V,2.4V | 2.5A,2.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
|
IC DRIVER MOSF QUAD
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns,45ns | 0.8V,2.4V | 2.5A,2.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER MOSF QUAD
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns,45ns | 0.8V,2.4V | 2.5A,2.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 12ns,12ns | 0.8V,2.4V | 4.5A,4.5A | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 44PLCC
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- | 12 V ~ 20 V | -40°C ~ 125°C (TA) | - | 44-PLCC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | - | - | 200mA,350mA | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
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IC DRIVER HI/LO 600V 10DFN
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- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
Diodes Incorporated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 8SO
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- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 8SO
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRIVER HS
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- | 4 V ~ 12.6 V | -40°C ~ 125°C | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | - | 1.3A,7.6A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRIVER HS
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- | 4 V ~ 12.6 V | -40°C ~ 125°C | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC HALF-BRIDGE GATE DRVR SOP8
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- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 300mA,600mA | ||||
Richtek USA Inc. |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH SOP8
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- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 300mA,600mA |