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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 2,639
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE-DRIVE 3PH HALFBRDG 24SOP
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOP | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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Vishay Siliconix |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC DRIVER MOSF N-CH DC/DC MLP33
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- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | PowerPAK? MLP33-10 | PowerPAK? MLP33-10 | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 32ns，36ns | 0.5V，4V | 900mA，1.1A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DRIVER SMD
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- | 4.5 V ~ 5.5 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 16ns，11ns | 0.6V，3.3V | - | |||
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Infineon Technologies |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC GATE DRIVER 5V 10DFN
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- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET GATE DVR DUAL 8-SOIC
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- | 10 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 16ns，15ns | 1V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET GATE DVR DUAL 8-DFN
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- | 10 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 16ns，15ns | 1V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DRIVER VR11.1/AMD 8-SOIC
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- | 10 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | 1V，2V | - | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC MOSFET DRIVER DUAL 10-MSOP
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- | 4.6 V ~ 5.5 V | -10°C ~ 150°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Surface Mount | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，15ns | 0.8V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DRIVER DUAL 12V 8LFCSP
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- | 4.15 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad，CSP | 8-LFCSP (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 20ns，20ns | 0.8V，2V | - | |||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC FET DRIVER EXTERNAL
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- | - | - | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | - | - | - | - | - | - | - | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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MOSFET DRVR 1.5A SGL HS 8DFN
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x3) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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MOSFET DRVR 1.5A SGL HS 8DFN
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x3) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER HI SPD 8-SOIC
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- | 4 V ~ 7 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 17ns，12ns | 0.8V，2.4V | 3A，3.2A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DVR SGL 9A HS 8SOIC
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Automotive，AEC-Q100 | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | |||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC IGBT GATE DVR DUAL 16SOIC
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- | -10 V ~ 25 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT | - | -，8ns | 0.8V，2V | 2A，4A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DVR SYNC VR12 8-SOIC
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- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | 0.7V，3.4V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DVR SYNC VR12 8-SOIC
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- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | 0.7V，3.4V | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 32V INV 8SOIC
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- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A |
