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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 2,639
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Linear Technology/Analog Devices |
Enquête
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MOQ: 2500 MPQ: 1
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IC DRVR NCH MOSFET 8-MSOP
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- | 6 V ~ 9.5 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 42V | 12ns,8ns | - | 2.4A,2.4A | ||||
Linear Technology/Analog Devices |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DRVR NCH MOSFET 8-MSOP
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- | 6 V ~ 9.5 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 42V | 12ns,8ns | - | 2.4A,2.4A | ||||
Linear Technology/Analog Devices |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR N-CH DUAL 8-SOIC
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- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 16ns,16ns | 1.7V,2.2V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 30V 1.5A 8-SOIC
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- | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,33ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 1.5A DUAL OD 8SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 40ns,40ns (Max) | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 30V 1.5A 8-SOIC
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- | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,33ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 1.5A DUAL OD 8SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 40ns,40ns (Max) | 0.8V,2.4V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER N-CH 8-SOIC
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- | 5 V ~ 25 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,8ns | 1.8V,2V | 6A,6A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR 3A DUAL HS 16SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 12ns,12ns | 0.8V,2.4V | 4.5A,4.5A | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC CTRLR SW HI-SIDE DUAL SOT23-6
|
- | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting | Independent | High-Side | 2 | N-Channel MOSFET | - | - | 0.6V,1.4V | - | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR 600V HALF 14SOIC
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- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 31ns,31ns | 0.8V,2.2V | 1A,1A | ||||
Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER N-CH 10-MSOP
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- | 5 V ~ 25 V | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,8ns | 1.8V,2V | 6A,6A | ||||
Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC HI-SIDE SW CNTRLR DUAL 8-MSOP
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- | 2.7 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Synchronous | High-Side | 2 | N-Channel MOSFET | - | - | 0.6V,1.4V | - | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC HI-SIDE SW CNTRLR DUAL 8-SOIC
|
- | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | High-Side | 2 | N-Channel MOSFET | - | - | 0.6V,1.4V | - | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2100 MPQ: 1
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IC MOSFET DVR 9A HS INV 8-SOIJ
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.209",5.30mm Width) | 8-SOIJ | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 60ns,60ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2100 MPQ: 1
|
IC MOSFET DVR 9A HS N-INV 8-SOIJ
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.209",5.30mm Width) | 8-SOIJ | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 60ns,60ns | 0.8V,2.4V | 9A,9A | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER N-CH 8-SOIC
|
- | 5 V ~ 25 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,8ns | 1.8V,2V | 6A,6A |