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- Supplier Device Package:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 2,639
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
Enquête
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 2A 8DFN-S
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,15ns | 0.8V,2.4V | 2A,2A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8MSOP
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8MSOP
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8MSOP
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 4.5A DUAL 8DFN
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | 4.5A,4.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 4.5A DUAL 8DFN
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | 4.5A,4.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 4.0A DUAL 8DFN
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | 4A,4A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 4.0A DUAL 8DFN
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | 4A,4A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 9A N-INV 8DFN
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 60ns,60ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 9A INV 8DFN
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 60ns,60ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 100V CMOS 8SOIC
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- | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 10ns,6ns | 3V,8V | 2A,3A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 12A HIGH SPEED
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 0.8V,2.4V | 12A,12A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 9A INV 8DFN
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRVR 9A N-INV 8DFN
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 12A HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 30ns,32ns | 0.8V,2.4V | 13A,13A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 12A HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 30ns,32ns | 0.8V,2.4V | 13A,13A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 100V TTL 8-SOIC
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- | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 10ns,6ns | 0.8V,2.2V | 2A,3A | ||||
Microchip Technology |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 16TSSOP
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- | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-SSOP (0.154",3.90mm Width) | 16-TSSOP | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 16-SOIC
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- | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR DUAL-NON 4A 8MSOP
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 4A,4A |