- Fabricant:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 2,639
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
HIGH AND LOW SIDE GATE DRIVER
|
- | 8 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-MLP (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 6ns,4ns | 1.3V,2.5V | 3A,6A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 14-SOP
|
- | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | 4.5A,4.5A | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Automotive,AEC-Q100 | 10 V ~ 32 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | - | 15ns,7ns | 1.2V,2.2V | 2.5A,5A | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Automotive,AEC-Q100 | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
SYNCH MOSFET CONTROLLER,SO-7,T&R
|
- | 4 V ~ 20 V | -50°C ~ 150°C | 8-SOIC (0.154",3.90mm Width),7 Leads | 7-SO | Surface Mount | - | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 695ns,131ns | - | 2A,5A | ||||
ON Semiconductor |
24,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Texas Instruments |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DGTL CTRL MOSFET DVR 14HTSSOP
|
- | 4.25 V ~ 15 V | -40°C ~ 105°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 10ns,10ns | 1.16V,2.08V | 4A,4A | ||||
Analog Devices Inc. |
22,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
- | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
SOP8 HIGH-CURRENT HIGH/LOW-SIDE
|
- | - | - | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | - | - | - | - | - | - | - | - | - | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns,10ns | - | - | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
Texas Instruments |
1,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
- | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 34V | 30ns,8ns | 0.6V,2.65V | - | ||||
Analog Devices Inc. |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Texas Instruments |
4,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Inverting,Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER SGL HS 9A 8MSOP
|
- | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1.1V,2.7V | 9A,9A |