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- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 7,777
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
7,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8VSON
|
Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
9,091
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8VSON
|
Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
9,091
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8VSON
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 9SON
|
Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VFDFN Exposed Pad,9 Leads | 9-VSON (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
1,727
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 9SON
|
Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VFDFN Exposed Pad,9 Leads | 9-VSON (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
1,727
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 9SON
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VFDFN Exposed Pad,9 Leads | 9-VSON (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
4,512
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Infineon Technologies |
3,137
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRDG DVR SELF-OSC 8SOIC
|
Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
2,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8DIP
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
1,056
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Renesas Electronics America Inc. |
5,790
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
1,303
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Infineon Technologies |
4,444
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Texas Instruments |
3,129
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER PRE FET 6 CHAN 28-SSOP
|
Tube | - | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 28-SSOP (0.209",5.30mm Width) | 28-SSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 6 | N-Channel MOSFET | - | 3.5μs,3μs | - | 1.2mA,1.2mA | ||||
IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DVR ULT FAST 14A 8-DIP
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-DIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Maxim Integrated |
3,119
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Maxim Integrated |
3,119
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
- | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Infineon Technologies |
3,044
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
ON Semiconductor |
5,844
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Tube | Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 300V | 65ns,25ns | - | 450mA,450mA |