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Découvrez les produits 4
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Input Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ISL2111BR4Z-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC MSFT DVR HALF-BRG 100V 8DFN
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Half-Bridge N-Channel MOSFET 114V 9ns,7.5ns 1.4V,2.2V 3A,4A
ISL2111BR4Z
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC MSFT DVR HALF-BRG 100V 8DFN
Tube 8 V ~ 14 V -40°C ~ 125°C (TJ) Non-Inverting Half-Bridge N-Channel MOSFET 114V 9ns,7.5ns 1.4V,2.2V 3A,4A
MIC4123YML-TR
Microchip Technology
Enquête
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MOQ: 5000  MPQ: 1
IC DRIVER MOSFET 3A DUAL 8-MLF
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 125°C (TJ) Inverting Low-Side N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,2.4V 3A,3A
NCP81075MNTXG
ON Semiconductor
Enquête
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MOQ: 4000  MPQ: 1
HIGH PERFORMANCE DUAL MOS
- 8.5 V ~ 20 V -40°C ~ 140°C (TJ) Non-Inverting High-Side or Low-Side N-Channel MOSFET 200V 8ns,7ns 0.8V,2.7V 4A,4A